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Other articles related with "transport mechanism"：
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27701 |
Qiang Li(李强), Dao Wang(王岛), Yan Zhang(张岩), Yu-Shan Li(李育珊), Ai-Hua Zhang(张爱华), Rui-Qiang Tao(陶瑞强), Zhen Fan(樊贞), Min Zeng(曾敏), Guo-Fu Zhou(周国富), Xu-Bing Lu(陆旭兵), and Jun-Ming Liu(刘俊明) |
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Sr-doping effects on conductivity, charge transport, and ferroelectricity of Ba0.7La0.3TiO3 epitaxial thin films |
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Chin. Phys. B
2021 Vol.30 (2): 27701-0
[Abstract]
(359)
[HTML 1 KB]
[PDF 1352 KB]
(86)
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37302 |
Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况) |
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Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing |
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Chin. Phys. B
2019 Vol.28 (3): 37302-037302
[Abstract]
(734)
[HTML 1 KB]
[PDF 2166 KB]
(207)
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38503 |
Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东) |
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High performance lateral Schottky diodes based on quasi-degenerated Ga2O3 |
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Chin. Phys. B
2019 Vol.28 (3): 38503-038503
[Abstract]
(746)
[HTML 1 KB]
[PDF 714 KB]
(323)
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18211 |
Jian Gao(高健), Yu-Sheng Zhao(赵予生), Si-Qi Shi(施思齐), Hong Li(李泓) |
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Lithium-ion transport in inorganic solid state electrolyte |
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Chin. Phys. B
2016 Vol.25 (1): 18211-018211
[Abstract]
(1520)
[HTML 1 KB]
[PDF 11307 KB]
(3017)
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47201 |
Li Yi (李宜), Liu Jian (刘剑), Wang Chun-Lei (王春雷), Su Wen-Bin (苏文斌), Zhu Yuan-Hu (祝元虎), Li Ji-Chao (李吉超), Mei Liang-Mo (梅良模) |
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Thermoelectric properties of Sr0.61Ba0.39Nb2O6 -δ ceramics in different oxygen-reduction conditions |
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Chin. Phys. B
2015 Vol.24 (4): 47201-047201
[Abstract]
(630)
[HTML 0 KB]
[PDF 621 KB]
(508)
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
(967)
[HTML 0 KB]
[PDF 390 KB]
(611)
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(719)
[HTML 1 KB]
[PDF 315 KB]
(1547)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(678)
[HTML 1 KB]
[PDF 268 KB]
(730)
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